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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
M8050
FEATURES
TRANSISTOR NPN (c) TO 92
1.EMITTER
Power dissipation PCM : 0.625 W Tamb=25ae(c) Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Symbol V(BR)CBO V(BR)CEO* V(BR)EBO ICBO ICEO
2. BASE
3. COLLECTOR
123
unless
otherwise
specified(c)
MIN 40 25 6 0.1 0.1 45 80 40 0.5 1.2 150 V V MHz 300 MAX UNIT V V V |I A |I A
Test
conditions
Ic= 100|I IE=0 A IC= 0.1mA , IB=0 IE= 100|I AIC=0 VCB= 35V , IE=0 VCE= 20V , IB=0 VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA IC= 800mA, IB=80mA IC=800mA, IB= 80m A VCE=6V, IC= 20mA , f=30MHz
hFE(1)
DC current gain
hFE(2) hFE(c) 3
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency
VCE(sat) VBE(sat)
fT
* Pulse Test pulse width U300s duty cycle U 2%
TO-92 PACKAGE OUTLINE DIMENSIONS
D
D1
A
A1
E
b |O
e e1
Symbol A A1 b c D D1 E e e1 L O
Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min
L
Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169
C

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